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參數資料
| 型號： | MRF1002MB |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | MICROWAVE POWER TRANSISTORS |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 109K |
| 代理商： | MRF1002MB |
1
MRF1002MA MRF1002MB
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 2.0 Watts Peak
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
20
Vdc
Collector–Base Voltage
50
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector Current — Continuous
250
mAdc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
7.0
40
Watts
mW/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
25
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
V(BR)CEO
20
—
—
Vdc
V(BR)CES
50
—
—
Vdc
V(BR)CBO
50
—
—
Vdc
V(BR)EBO
3.5
—
—
Vdc
ICBO
—
—
0.5
mAdc
hFE
10
—
100
—
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
(continued)
Order this document
by MRF1002MA/D
SEMICONDUCTOR TECHNICAL DATA
2.0 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
MRF1002MA
CASE 332A–03, STYLE 1
MRF1002MB
REV 6
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| MRF10031 | 功能描述:射頻雙極電源晶體管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發射極最大電壓 VCEO:25 V 發射極 - 基極電壓 VEBO:4 V 集電極連續電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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| MRF1004MA | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF1004MB | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發射極最大電壓 VCEO:25 V 發射極 - 基極電壓 VEBO:4 V 集電極連續電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| MRF10070 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTOR |
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