
1
MRF15030
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
Specified 26 Volts, 1490 MHz, Class AB Characteristics:
Output Power — 30 Watts
Gain — 9 dB Min @ 30 Watts (PEP)
Efficiency — 30% Min @ 30 Watts (PEP)
Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP)
Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz,
VCE = 24 Vdc, IC = 2.5 Adc
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
Characterized with Small Signal S–Parameters from 1000–2000 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with
3:1 Load VSWR @ 28 Vdc, at Rated Output Power
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
25
Vdc
Collector–Emitter Voltage
60
Vdc
Emitter–Base Voltage
4
Vdc
Collector–Current — Continuous
10
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
125
0.71
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.40
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
25
29
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
60
64
—
Vdc
Collector–Emitter Breakdown Voltage
(IC
= 50 mAdc, RBE = 100
)
V(BR)CER
30
52
—
Vdc
(continued)
Order this document
by MRF15030/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
REV 7