欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MRF15030
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: CAP .00022UF 50V POLYPROPYLENE
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數: 1/8頁
文件大小: 158K
代理商: MRF15030
1
MRF15030
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
Specified 26 Volts, 1490 MHz, Class AB Characteristics:
Output Power — 30 Watts
Gain — 9 dB Min @ 30 Watts (PEP)
Efficiency — 30% Min @ 30 Watts (PEP)
Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP)
Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz,
VCE = 24 Vdc, IC = 2.5 Adc
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
Characterized with Small Signal S–Parameters from 1000–2000 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with
3:1 Load VSWR @ 28 Vdc, at Rated Output Power
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
25
Vdc
Collector–Emitter Voltage
60
Vdc
Emitter–Base Voltage
4
Vdc
Collector–Current — Continuous
10
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
125
0.71
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.40
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
25
29
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
60
64
Vdc
Collector–Emitter Breakdown Voltage
(IC
= 50 mAdc, RBE = 100
)
V(BR)CER
30
52
Vdc
(continued)
Order this document
by MRF15030/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
REV 7
相關PDF資料
PDF描述
MRF19030S RF Power MOSFETs(RF功率MOS場效應管)
MRF19120 RF Power MOSFETs(RF功率MOS場效應管)
MRF19120S RF Power MOSFETs(RF功率MOS場效應管)
MRF21030 RF Power MOSFETs(RF功率MOS場效應管)
MRF21030S RF Power MOSFETs(RF功率MOS場效應管)
相關代理商/技術參數
參數描述
MRF15060 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER BIPOLAR TRANSISTORS
MRF15060S 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER BIPOLAR TRANSISTORS
MRF1507 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL NCHANNEL BROADBAND RF POWER MOSFET
MRF1507T1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL NCHANNEL BROADBAND RF POWER MOSFET
MRF15090 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR
主站蜘蛛池模板: 屏南县| 三门县| 扶风县| 丰原市| 浦东新区| 榆树市| 文安县| 临西县| 潼关县| 曲周县| 东兰县| 永新县| 黄陵县| 周口市| 寿宁县| 阳新县| 浪卡子县| 会同县| 卢氏县| 竹北市| 措勤县| 都安| 宜州市| 左云县| 镇雄县| 青龙| 涪陵区| 景德镇市| 承德县| 苍溪县| 鹤庆县| 青海省| 长兴县| 富民县| 习水县| 渭南市| 南陵县| 铜鼓县| 曲松县| 万盛区| 潞城市|