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參數資料
| 型號： | MRF10031 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | MICROWAVE POWER TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CASE 376B-02, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 101K |
| 代理商： | MRF10031 |
1
MRF10031
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
Designed for 960–1215 MHz long or short pulse common base amplifier
applications such as JTIDS and Mode–S transmitters.
Guaranteed Performance @ 960 MHz, 36 Vdc
Output Power = 30 Watts Peak
Minimum Gain = 9.0 dB Min (9.5 dB Typ)
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Industry Standard Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCBO
VEBO
IC
PD
55
Vdc
Collector–Base Voltage (1)
55
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector Current — Continuous (1)
3.0
Adc
Total Device Dissipation @ TC = 25
°
C (1), (2)
Derate above 25
°
C
110
0.625
Watts
mW/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to + 200
°
C
Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R
θ
JC
1.6
°
C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
θ
JC value
measured @ 23% duty cycle)
Order this document
by MRF10031/D
SEMICONDUCTOR TECHNICAL DATA
30 W (PEAK)
960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376B–02, STYLE 1
REV 6
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