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參數資料
| 型號： | MRF136 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-07, 4 PIN |
| 文件頁數： | 4/11頁 |
| 文件大小： | 340K |
| 代理商： | MRF136 |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 5.0 mA)
V(BR)DSS
65
—
Vdc
Zero–Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
2.0
mAdc
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Forward Transconductance
(VDS = 10 V, ID = 250 mA)
gfs
250
400
—
mmhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
24
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
5.5
—
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)
NF
—
1.0
—
dB
Common Source Power Gain (Figure 1)
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
Gps
13
16
—
dB
Drain Efficiency (Figure 1)
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)
η
50
60
—
%
Electrical Ruggedness (Figure 1)
(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. Each side measured separately.
2
REV 7
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF136MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:MRF136MP |
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| MRF137 | 功能描述:射頻MOSFET電源晶體管 5-400MHz 30Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF13750H-915MHZ | 功能描述:MRF13750H-915MHZ 制造商:nxp usa inc. 系列:- 零件狀態:在售 晶體管類型:LDMOS（雙） 頻率:700MHz ~ 1.3GHz 增益:20.6dB 電壓 - 測試:50V 額定電流:10μA 噪聲系數:- 功率 - 輸出:650W 電壓 - 額定:105V 封裝/外殼:SOT-979A 供應商器件封裝:NI-1230H-4S 標準包裝:1 |
| MRF13750HR5 | 功能描述:RF POWER LDMOS TRANSISTOR 750 W 制造商:nxp usa inc. 系列:- 零件狀態:在售 晶體管類型:LDMOS（雙） 頻率:700MHz ~ 1.3GHz 增益:20.6dB 電壓 - 測試:50V 額定電流:10μA 噪聲系數:- 功率 - 輸出:650W 電壓 - 額定:105V 封裝/外殼:SOT-979A 供應商器件封裝:NI-1230H-4S 標準包裝:1 |
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