欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: MRF1507T1
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: POWER, PLASTIC, CASE 466-02, 4 PIN
文件頁數(shù): 7/12頁
文件大?。?/td> 173K
代理商: MRF1507T1
LIFETIME
BUY
LAST
ORDER
30JUN02
LAST
SHIP
30DEC0
2
MRF1507
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
P out
GAIN
(dB),
(W
A
TTS)
P out
GAIN
(dB),
Figure 4. Output Power versus
Supply Voltage @ 470 MHz
12
VDD, SUPPLY VOLTAGE (V)
5
4
8
10
Figure 5. Output Power versus
Supply Voltage @ 440 MHz
VDD, SUPPLY VOLTAGE (V)
79
P out
,OUTPUT
PO
WE
R
(W
A
TTS)
6
P out
,OUTPUT
POWER
(W
A
TTS)
11
Figure 6. Output Power versus Gate Current
9
IDQ, GATE CURRENT (mA)
6
Figure 7. Gain, Pout, Efficiency
versus Drain Voltage
16
VDD, DRAIN VOLTAGE (V)
4
450
Figure 8. Pout versus IDQ
0
IDQ (A)
8
0.7
Figure 9. Pout, Gain, Drain Efficiency versus Pin
INPUT POWER (dBm)
0
23
0.3
15
0
5
10
12
0
67
4
10
12
30
40
DRAIN
E
FFICI
E
NC
Y
(
%
)
13
89
10
15
20
50
60
70
80
6.5
7
7.5
8
f = 520 MHz
IDQ = 150 mA
Pin = 0.7 W
f = 440 MHz
200
6
9
8.5
5
8
10
Pin = 300 mW
500 mW
700 mW
7
12
5
4
8
10
79
6
11
13
6
9
10
7
Pin = 300 mW
500 mW
700 mW
P out
,OUTPUT
PO
WE
R
(W
A
TTS)
50
100
150
250
500
300
350
400
VCC = 7.5 V
Pin = 0.6 W
f = 400 MHz
f = 470 MHz
(W
A
TTS)
DRAIN EFFICIENCY
GAIN
Pout
P out
,OUTPUT
PO
WE
R
(W
A
TTS)
0.1
0.8
0.4
0.5
0.2
0.6
0.9
1.0
Pout
GAIN
f = 520 MHz
VDD = 7.5 V
Pin = 0.7 W
20
30
DRAIN
EFFICIENCY
(%)
40
50
60
70
17
19
21
27
25
29
f = 520 MHz
VDD = 7.5 V
IDQ = 150 mA
Pout
GAIN
DRAIN EFFICIENCY
IDQ = 200 mA
G
p
(d
B),
相關(guān)PDF資料
PDF描述
MRF1508 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1508T1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1508 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1511NT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1511T1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF15090 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR
MRF150J 功能描述:射頻MOSFET電源晶體管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF150MP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF151 功能描述:射頻MOSFET電源晶體管 5-175MHz 150Watts 50Volt Gain 18dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF1511N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
主站蜘蛛池模板: 伊宁市| 望城县| 潞西市| 晋中市| 吉安县| 开远市| 高清| 长岛县| 东莞市| 开阳县| 日土县| 蓝山县| 舒城县| 宝山区| 海淀区| 榕江县| 清流县| 星座| 茂名市| 齐齐哈尔市| 阳泉市| 昭觉县| 交口县| 东兴市| 泗阳县| 稻城县| 融水| 吴江市| 德阳市| 连山| 米泉市| 新营市| 吉林市| 新余市| 濮阳县| 河南省| 柘荣县| 朝阳市| 莱芜市| 九江市| 永和县|