- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄98036 > MRF158 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF158 |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 305A-01, 4 PIN |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 493K |
| 代理商： | MRF158 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)
The RF TMOS
Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed for wideband large–signal amplifier and oscillator applications to
500 MHz.
Guaranteed 28 Volt, 500 MHz Performance
Output Power = 2.0 Watts
Minimum Gain = 16 dB (Min)
Efficiency = 55% (Typ)
Facilitates Manual Gain Control, ALC and Modulation
Techniques
100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
Excellent Thermal Stability, Ideally Suited for Class A
Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
0.5
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
8.0
45
Watts
mW/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
13.2
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF158
To 500 MHz, 2 W, 28 V
TMOS
BROADBAND
RF POWER FET
CASE 305A–01, STYLE 2
D
S
G
Order this document
by MRF158/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF175GV | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18060BLR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18060BLSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18085BLSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18085BLR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF160 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 4Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF16006 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 60V 1A 3PIN CASE 395C-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF16030 | 制造商:MA-COM 制造商全稱(chēng):M/A-COM Technology Solutions, Inc. 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF161 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SILICON N-CHANNEL RF POWER MOSFET |
| MRF166 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:MOSFET BROADBAND RF POWER FETs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。