- 您現在的位置：買賣IC網 > PDF目錄98036 > MRF175GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF175GV |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 375-04, 4 PIN |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MRF175GV |
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
Guaranteed Performance
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
100% Ruggedness Tested At Rated Output Power
Low Thermal Resistance
Low Crss — 20 pF Typ @ VDS = 28 V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
26
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
400
2.27
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.44
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
2.5
mAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
1.0
Adc
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF175GU
MRF175GV
200/150 WATTS, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
CASE 375–04, STYLE 2
D
G
S
(FLANGE)
D
G
Order this document
by MRF175GU/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 8
相關PDF資料 |
PDF描述 |
|---|---|
| MRF18060BLR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18060BLSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18085BLSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF18085BLR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF181SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF175LU | 功能描述:射頻MOSFET電源晶體管 400MHz 28Volt 100W Gain 10dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF175LV | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL BROADBAND RF POWER FETs |
| MRF176 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF176GU | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 125V 16A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF176GV | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 125V 16A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
發布緊急采購，3分鐘左右您將得到回復。