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參數資料
型號: MRF175GV
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 375-04, 4 PIN
文件頁數: 5/11頁
文件大小: 214K
代理商: MRF175GV
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS — MRF175GU (1) (Figure 2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
Gps
10
12
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
η
50
55
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTE:
1. Measured in push–pull configuration.
Figure 2. 400 MHz Test Circuit
B1 — Balun 50
Semi Rigid Coax 0.086″ O.D. 2″ Long
B2 — Balun 50
Semi Rigid Coax 0.141″ O.D. 2″ Long
C1, C2, C8, C9 — 270 pF ATC Chip Cap
C3, C5, C7 — 1.0–20 pF Trimmer Cap
C4 — 15 pF ATC Chip Cap
C6 — 33 pF ATC Chip Cap
C10, C12, C13, C16, C17 — 0.01
F Ceramic Cap
C11 — 1.0
F 50 V Tantalum
C14, C15 — 680 pF Feedthru Cap
C18 — 20
F 50 V Tantalum
L1, L2 — Hairpin Inductor #18 Wire
L3, L4 — 12 Turns #18 Enameled Wire 0.340
″ I.D.
L5 — Ferroxcube VK200 20/4B
L6 — 3 Turns #16 Enameled Wire 0.340
″ I.D.
R1 — 1.0 k
1/4 W Resistor
R2, R3 — 10 k
1/4 W Resistor
Z1, Z2 — Microstrip Line 0.400
″ x 0.250″
Z3, Z4 — Microstrip Line 0.870
″ x 0.250″
Z5, Z6 — Microstrip Line 0.500
″ x 0.250″
Board material — 0.060
″ Teflon–fiberglass,
εr = 2.55, copper clad both sides, 2 oz. copper.
BIAS
C10
C11
R1
C12
C13
C14
C15
L5
L6
C18
28 V
B1
C3
C4
C5
C6
C7
B2
C2
L2
R3
L4
C16
C17
B
A
Z2
Z1
Z3
Z5
Z4
Z6
0.180″
0.200″
A
B
D.U.T.
R2
L3
C9
C1
L1
C8
3
REV 8
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相關代理商/技術參數
參數描述
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