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參數資料
| 型號： | MRF175GV |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 375-04, 4 PIN |
| 文件頁數： | 4/11頁 |
| 文件大小： | 214K |
| 代理商： | MRF175GV |
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
6.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A)
VDS(on)
0.1
0.9
1.5
Vdc
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
gfs
2.0
3.0
—
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
180
—
pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
200
—
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
20
—
pF
FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
Gps
12
14
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
η
55
65
—
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
Figure 1. 225 MHz Test Circuit
C1 — Arco 404, 8.0–60 pF
C2, C3, C7, C8 — 1000 pF Chip
C4, C9 — 0.1
F Chip
C5 — 180 pF Chip
C6 — 100 pF and 130 pF Chips in Parallel
C10 — 0.47
F Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enamel Wire, Close
L1 — Wound, 1/4
″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5–2.0
H Total Inductance
Board material — .062
″ fiberglass (G10),
Two sided, 1 oz. copper,
εr ^ 5
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent.
R1 — 100 Ohms, 1/2 W
R2 — 1.0 k Ohm, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 — Can Be Made of 25 Ohm Semirigid Coax,
T1 — 47–52 Mils O.D.
T2 — 1:9 Impedance Ratio RF Transformer.
T2 — Can Be Made of 15–18 Ohms Semirigid
T2 — Coax, 62–90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
BIAS 0-6 V
R1
C3
C4
R2
C1
C2
T1
C5
D.U.T.
C6
T2
C7
L1
C8
C9
L2
C10
+
-
28 V
2
REV 8
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相關代理商/技術參數 |
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| MRF175LU | 功能描述:射頻MOSFET電源晶體管 400MHz 28Volt 100W Gain 10dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF175LV | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL BROADBAND RF POWER FETs |
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| MRF176GU | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 125V 16A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF176GV | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 125V 16A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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