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參數(shù)資料
| 型號(hào)： | MRF158 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 305A-01, 4 PIN |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大小： | 493K |
| 代理商： | MRF158 |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 1.0 mA)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
IDSS
—
0.5
mAdc
Gate–Source Leakage Current (VGS = 20 V, VDS = 0)
IGSS
—
1.0
Adc
ON CHARACTERISTICS
Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)
VGS(th)
2.0
4.0
5.0
Vdc
Forward Transconductance (VDS = 10 V, ID = 100 mA)
gfs
80
110
—
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
3.0
—
pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
4.0
—
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
0.45
—
pF
FUNCTIONAL CHARACTERISTICS (Figure 1)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Gps
16
18
—
dB
Drain Efficiency (Figure 1)
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
η
50
55
—
%
Electrical Ruggedness (Figure 1)
(VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Zin
—
5.9 – j19.4
—
Ohms
Series Equivalent Output Impedance
(VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA)
Zout
—
14.5 – j29
—
Ohms
2
REV 9
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