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參數資料
| 型號： | MRF184SR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360S, CASE 360C-05, 3 PIN |
| 文件頁數： | 5/12頁 |
| 文件大小： | 1009K |
| 代理商： | MRF184SR1 |
Archived 2005
A
R
C
H
IV
E
D
2
0
5
MRF184R1 MRF184SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200 A)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
–
0.65
0.8
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.2
2.6
–
s
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Ciss
–
83
–
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
44
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
–
4.3
–
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Gps
11.5
13.5
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
η
53
60
–
%
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz,
Load VSWR 5:1 at all Phase Angles)
ψ
No Degradation in Output Power
Figure 1. MRF184 Test Circuit Schematic
B1
Short RF Bead Fair Rite–2743019447
C1
18 pF Chip Capacitor
C2, C3, C6, C9
43 pF Chip Capacitor
C4
100 pF Chip Capacitor
C5, C12
10
F, 50 Vdc Electrolytic Capacitor
C7, C10
1000 pF Chip Capacitor
C8, C11
0.1
F, 50 Vdc Chip Capacitor
C13
250
F, 50 Vdc Electrolytic Capacitor
R1
R2
R3
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
L1
B1
R4
DUT
C13
C12
TL1
TL2
TL3
TL4
RF
INPUT
RF
OUTPUT
VGG
VDD
L1
5 Turns, 20 AWG, IDIA 0.126
″
R1
10 k
, 1/4 W Resistor
R2
13 k
, 1/4 W Resistor
R3
1.0 k
, 1/4 W Chip Resistor
R4
4 x 39
, 1/8 W Chip Resistor
TL1–TL4
Microstrip Line See Photomaster
Ckt Board
1/32
″ Glass Teflon, εr = 2.55
ARLON–GX–0300–55–22
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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