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參數資料
型號: MRF184SR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-360S, CASE 360C-05, 3 PIN
文件頁數: 6/12頁
文件大小: 1009K
代理商: MRF184SR1
Archived 2005
A
R
C
H
IV
E
D
2
0
5
3
MRF184R1 MRF184SR1
MOTOROLA RF DEVICE DATA
P out
,OUTPUT
POWER
(W
ATTS)
Pout, OUTPUT POWER (WATTS)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Pout, OUTPUT POWER (WATTS) PEP
-15
-45
-55
0.1
1
10
100
-20
0
203040
60
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
TYPICAL CHARACTERISTICS
Figure 2. Intermodulation Distortion Products
versus Output Power
Figure 3. Intermodulation Distortion versus
Output Power
-30
-40
-50
-60
-80
5th
7th
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 400 mA
IDQ = 100 mA
250 mA
400 mA
18
14
12
1
10
100
G ps
,POWER
GAIN
(dB)
Figure 4. Power Gain versus Output Power
80
50
20
0
01
2
3
Pin, INPUT POWER (WATTS)
P out
,OUTPUT
POWER
(W
ATTS)
Figure 5. Output Power versus Input Power
VDS = 28 Vdc
IDQ = 400 mA
f = 945 MHz
100
12
16
20
32
VDD, SUPPLY VOLTAGE (VOLTS)
P out
,OUTPUT
POWER
(W
ATTS)
Figure 6. Output Power versus Supply Voltage
80
40
0
80
0
0.5
1
5
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate Voltage
60
40
0
20
2
3.5
Gps
Pout
TYPICAL DEVICE SHOWN
3rd ORDER
-70
10
50
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
600 mA
-35
-25
400 mA
250 mA
VDD = 28 Vdc
f = 945 MHz
100 mA
16
G ps
,POWER
GAIN
(dB)
70
40
10
30
60
0.5
1.5
2.5
16
14
15
IDQ = 400 mA
f = 945 MHz
1.0 W
2.0 W
Pin = 4.0 W
VDS = 28 Vdc
Pin = 2.0 W
f = 945 MHz
14
18
28
24
30
22
26
60
20
70
50
2.5
3
4
4.5
1.5
IDQ = 600 mA
70
30
90
50
10
30
10
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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