- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98036 > MRF19085R3 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF19085R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 584K |
| 代理商： | MRF19085R3 |
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
33
34
35
36
37
38
39
32
31
30
29
28
27
26
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
VDD, DRAIN SUPPLY (V)
Figure 9. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
,DRAIN
EFFICIENCY
(%)
η
IDQ = 850 mA
f = 1960 MHz
100 kHz Tone Spacing
IMD
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
11.5
12.0
12.5
13.0
13.5
14.0
10
100
4
Figure 10. Two-Tone Power Gain versus Output
Power
Figure 11. Two-Tone Broadband Performance
10
15
20
25
30
35
40
35
30
25
20
15
10
5
1920
1930
1940
1950
1960
1970
1980
1990
2000
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
IDQ = 1150 mA
1000 mA
850 mA
700 mA
550 mA
G
ps
,POWER
GAIN
(dB),
,DRAIN
EFFICIENCY
(%)
η
IMD
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
f, FREQUENCY (MHz)
INPUT
RETURN
LOSS
(dB)
IRL,
IRL
Gps
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 850 mA
100 kHz Tone Spacing
F
re
e
sc
a
le
S
e
m
ic
o
n
d
u
c
to
r,
I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
c
..
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF19120S | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19125R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19125SR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045LSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21045R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19085SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090 | 制造商:Motorola Inc 功能描述: |
| MRF19090R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF19090SR3 | 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。