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參數資料
型號: MRF19125SR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁數: 9/12頁
文件大小: 388K
代理商: MRF19125SR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MRF19125SR3
TYPICAL CHARACTERISTICS
55
50
45
40
35
30
25
20
10
150
4
Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
IM3,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
Pout, OUTPUT POWER (WATTS Avg.) NCDMA
IM3
(dBc),
ACPR
(dBc)
f, FREQUENCY (MHz)
INPUT
RETURN
LOSS
(dB)
,DRAIN
EFFICIENCY
(%)
η
Figure 6. 2-Carrier N-CDMA Broadband
Performance
Figure 7. CW Performance
0
5
10
15
20
25
30
70
63
56
49
42
35
28
110
40
VDD = 26 Vdc, IDQ = 1300 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
70
60
50
40
30
20
5
11
23
29
35
41
10
150
η
4
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
Pout, OUTPUT POWER (WATTS) PEP
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
IM3
(dBc),
ACPR
(dBc),
IRL,
1100 mA
1700 mA
1300 mA
IDQ = 900 mA
1500 mA
12
14
16
18
20
22
24
60
50
40
30
20
10
0
1930
1940
1950
1960
1970
1980
2000
VDD = 26 Vdc
Pout = 24 Watts (Avg.)
IDQ = 1300 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
Gps
ACPR
η
IRL
Pout, OUTPUT POWER (WATTS)
,INPUT
POWER
(W
A
TTS),
G
ps
,POWER
GAIN
(dB)
P
in
0
2
4
6
8
10
12
14
0
8
16
24
32
40
48
56
10
100
2
200
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
Gps
P in
η
,DRAIN
EFFICIENCY
(%)
η
IM3
Gps
ACPR
17
100
80
7th Order
5th Order
3rd Order
100
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
1920
1990
IM3
33
34
35
36
37
38
32
31
30
29
28
27
24
24.5
25
25.5
26
26.5
27
27.5
28
VDD, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
,DRAIN
EFFICIENCY
(%)
η
IDQ = 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
IMD
32
33
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