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參數資料
| 型號： | MRF21045R3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400, CASE 465E-04, 2 PIN |
| 文件頁數： | 9/12頁 |
| 文件大小： | 406K |
| 代理商： | MRF21045R3 |
MRF21045R3 MRF21045LR3 MRF21045SR3 MRF21045LSR3
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
29
34
42
24
-32
-24
η
IMD
IDQ = 500 mA
Pout = 45 W (PEP)
f1 = 2135 MHz, f2 = 2145 MHz
41
-25
40
-26
39
-27
38
-28
37
-29
36
-30
35
-31
28
27
26
25
60
12.5
15.5
2
0
60
Gps
η
VDD = 28 Vdc
IDQ = 500 mA
f = 2170 MHz
15
50
14.5
40
14
30
13.5
20
13
10
50
30
10
8
6
4
2190
14
28
2090
-45
-10
IRL
Gps
η
ACPR
IM3
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 500 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
26
-15
24
-20
22
-25
20
-30
18
-35
16
-40
2170
2150
2130
2110
60
-65
-25
3
5
45
7th Order
η
3rd Order
5th Order
-30
-35
-40
-45
-50
-55
-60
40
35
30
25
20
15
10
46
8
10
50
30
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
IM3
(dBc),
ACPR
(dBc)
f, FREQUENCY (MHz)
INPUT
RETURN
LOSS
(dB)
,DRAIN
EFFICIENCY
(%)
η
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2-Carrier W-CDMA Broadband
Performance
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
Pout, OUTPUT POWER (WATTS) PEP
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
IM3
(dBc),
ACPR
(dBc),
IRL,
Pout, OUTPUT POWER (WATTS)
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
,DRAIN
EFFICIENCY
(%)
η
60
-50
-25
4
-30
-35
-40
-45
50
30
10
8
6
IDQ = 300 mA
700 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
600 mA
400 mA
500 mA
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
20
0
30
0.5
-55
-25
Gps
η
ACPR
IM3
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
Pout, OUTPUT POWER (WATTS Avg.) W-CDMA
-35
-30
-45
-40
-50
25
20
15
10
5
10
1
Figure 8. Two-Tone Intermodulation
Distortion and Drain Efficiency versus Drain
Supply
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21045S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21060 | 制造商:Motorola Inc 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR |
| MRF21060LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21060R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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