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參數資料
| 型號： | MRF284LR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360, CASE 360B-05, 2 PIN |
| 文件頁數： | 5/12頁 |
| 文件大小： | 395K |
| 代理商： | MRF284LR1 |
MRF284LR1 MRF284LSR1
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 Adc)
VGS(th)
2.0
3.0
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 200 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
—
0.3
0.6
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.0 Adc)
gfs
—
1.5
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
43
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
23
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
1.4
—
pF
FUNCTIONAL TESTS (in Motorola Test Fixture, 50 ohm system)
Common-Source Power Gain
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
9
10.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
35
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
-32
-29
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
-15
-9
dB
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
9
10.4
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
—
35
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
-34
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
-15
-9
dB
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
Gps
8.5
9.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
η
35
45
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
at All Phase Angles)
Ψ
No Degradation In Output Power
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF284LSR1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF284R5 | 制造商:Motorola Inc 功能描述:284R5 |
| MRF284S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field-Effect Transistors |
| MRF286 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors |
| MRF286S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors |
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