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參數資料
| 型號： | MRF284LSR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-360S, CASE 360C-05, 2 PIN |
| 文件頁數： | 11/12頁 |
| 文件大小： | 395K |
| 代理商： | MRF284LSR1 |
MRF284LR1 MRF284LSR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
I D
,DRAIN
CURRENT
(Adc)
Figure 11. DC Safe Operating Area
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 12. Capacitance versus
Drain Source Voltage
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
28
12
20
4
0
100
10
1
Figure 13. Class A Third Order Intercept Point
Pin, INPUT POWER (dBm)
60
40
30
20
10
0
60
40
20
0
20
80
C,
CAP
ACIT
ANCE
(pF)
P out
,
OUTPUT
POWER
(dBm)
24
Crss
16
8
FUNDAMENTAL
3rd Order
Coss
50
35
25
15
545
55
50
30
10
30
40
60
50
70
1
0
28
24
20
16
12
8
4
0
Tflange = 75°C
Tflange = 100°C
TJ = 175°C
3
2
Ciss
90
VDD = 26 Vdc
IDQ = 1.8 Adc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
1.0
Figure 14. 1.92-2.0 GHz Broadband Circuit Performance
f, FREQUENCY (MHz)
1920
11
G
ps
,GAIN
(dB)
10
9
8
7
6
5
4
3
1940
1960
1980
2000
VDD = 26 Vdc
Pout = 30 W (PEP), IDQ = 200 mA
TwoTone
Frequency Delta = 100 kHz
Gps
η
IMD
VSWR
45
32
40
30
36
2.0
3.0
INPUT
VSWR
EFFICIENCY
(%)
35
INTERMODULA
TION
DIST
ORTION
(dBc)
TJ, JUNCTION TEMPERATURE (°C)
250
200
150
100
50
0
1.E+10
1.E+09
1.E+07
1.E+06
1.E+05
MTBF
FACT
OR
(HOURS
x
AMPS
)
This graph displays calculated MTBF in hours x ampere2 drain current.
Life tests at elevated temperature have correlated to better than
±10%
of the theoretical prediction for metal failure. Divide MTBF factor by ID2
for MTBF in a particular application.
1.E+08
2
1.E+04
Figure 15. MTBF Factor versus Junction Temperature
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