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參數資料
型號: MRF374A
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
文件頁數: 5/12頁
文件大小: 367K
代理商: MRF374A
2
RF Device Data
Freescale Semiconductor
MRF374A
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 μA)
V(BR)DSS
70
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage (2)
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 V, ID = 3 A)
VDS(on)
0.41
0.45
Vdc
Dynamic Characteristics (1)
Input Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
97.3
pF
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
49
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
1.91
pF
Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17.3
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
36
41.2
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
-32.5
-28
dB
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
相關PDF資料
PDF描述
MRF374 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF377HR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF377 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF377R3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF377R5 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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