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參數資料
| 型號： | MRF5S19060NBR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封裝： | PLASTIC, CASE 1484-02, 4 PIN |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 401K |
| 代理商： | MRF5S19060NBR1 |
MRF5S19060NR1 MRF5S19060NBR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large - signal, common -
source amplifier applications in 28 Volt base station equipment.
Typical 2-carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA,
Pout = 12 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. Peak/Avg.
= 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — -37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc @ 30 kHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg.
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Integrated ESD Protection
Lead-Free Terminations, 200°C Capable Plastic Package
TO-270 WB-4 in Tape and Reel. R1 Suffix - 500 Units per 32 mm, 13 inch
Reel.
TO-272 WB-4 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch
Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
218.8
1.25
W
W/°C
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 12 W CW
RθJC
0.80
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5S19060N/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF5S19060NR1
MRF5S19060NBR1
1990 MHz, 12 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S19060NR1
CASE 1484-02, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S19060NBR1
Motorola, Inc. 2004
REV 0
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PDF描述 |
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| MRF5S19060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S19060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S19090HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19090LSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF5S19090LR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF5S19060NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 60W 28V TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S19060NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19090HR3 | 功能描述:MOSFET RF N-CHAN 28V 18W NI-780 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19090HR5 | 功能描述:MOSFET RF N-CHAN 28V 18W NI-780 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF5S19090HSR3 | 功能描述:MOSFET RF N-CHAN 28V 18W NI-780S RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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