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參數(shù)資料
| 型號： | MRF650 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 316-01, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 154K |
| 代理商： | MRF650 |
1
MRF650
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 520 MHz.
Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
Output Power = 50 Watts
Minimum Gain = 5.2 dB @ 440, 470 MHz
Efficiency = 55% @ 440, 470 MHz
IRL = 10 dB
Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz
Built–In Matching Network for Broadband Operation
Triple Ion Implanted for More Consistent Characteristics
Implanted Emitter Ballast Resistors
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with 20:1
VSWR @ 15.5 Vdc, 2.0 dB Overdrive
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
16.5
Vdc
Collector–Emitter Voltage
38
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
12
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
135
0.77
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25
°
C)
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
16.5
—
—
Vdc
38
—
—
Vdc
4.0
—
—
Vdc
—
—
5.0
mAdc
hFE
20
70
120
—
Cob
—
135
170
pF
(continued)
Order this document
by MRF650/D
SEMICONDUCTOR TECHNICAL DATA
50 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
REV 8
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