- 您現在的位置：買賣IC網 > PDF目錄382350 > MSC2295-BT1G (ON SEMICONDUCTOR) NPN RF Amplifier Transistors Surface Mount PDF資料下載
參數資料
| 型號： | MSC2295-BT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN RF Amplifier Transistors Surface Mount |
| 中文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-59, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 48K |
| 代理商： | MSC2295-BT1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
Publication Order Number:
MSC2295BT1/D
MSC2295BT1,
MSC2295CT1
Preferred Device
NPN RF Amplifier
Transistors Surface Mount
Features
PbFree Packages are Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
(BR)CBO
30
Vdc
CollectorEmitter Voltage
V
(BR)CEO
20
Vdc
EmitterBase Voltage
V
(BR)EBO
5.0
Vdc
Collector Current Continuous
I
C
30
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
°
C
Storage Temperature
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Characteristic
Symbol
Min
Max
Unit
CollectorBase Cutoff Current
(V
CB
= 10 Vdc, I
E
= 0)
I
CBO
0.1
Adc
DC Current Gain (Note 1)
(V
CB
= 10 Vdc, I
C
= 1.0 mAdc)
MSC2295BT1
MSC2295CT1
h
FE
70
110
140
220
CollectorGain — Bandwidth Product
(V
CB
= 10 Vdc, I
E
= 1.0 mAdc)
f
T
150
MHz
Reverse Transistor Capacitance
(V
CE
= 10 Vdc,
I
C
= 1.0 mAdc, f = 10.7 MHz)
1. Pulse Test: Pulse Width
≤
300 s, D.C.
≤
2%.
C
re
1.5
pF
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
SC59
CASE 318D
MARKING DIAGRAM
2
1
3
Vx M
Vx
= Device Code
x= B or C
= Date Code*
= PbFree Package
M
COLLECTOR
3
2
BASE
1
EMITTER
Device
Package
Shipping
ORDERING INFORMATION
MSC2295BT1
SC59
3000/Tape & Reel
MSC2295CT1
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SC59
(PbFree)
SC59
SC59
(PbFree)
MSC2295BT1G
MSC2295CT1G
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
相關PDF資料 |
PDF描述 |
|---|---|
| MSC2295-CT1G | NPN RF Amplifier Transistors Surface Mount |
| MSC3930-BT1 | NPN RF Amplifier Transistor |
| MSC3930-BT1G | NPN RF Amplifier Transistor |
| MSD2714AT1G | VHF/UHF Transistor |
| MSD42T1 | NPN Silicon General Purpose High Voltage Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MSC2295-CT1 | 功能描述:兩極晶體管 - BJT 30V RF NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSC2295-CT1G | 功能描述:兩極晶體管 - BJT 30V RF NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSC23108C | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-wordx8-Bit DRAM MODULE:FAST PAGE MODE TYPE |
| MSC23108CL-XXDS2 | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-wordx8-Bit DRAM MODULE:FAST PAGE MODE TYPE |
| MSC23109C | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:1,048,576-word x 9-Bit DRAM MODULE:FAST PAGE MODE TYPE |
發布緊急采購，3分鐘左右您將得到回復。