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參數資料
型號: MSD42T1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: NPN Silicon General Purpose High Voltage Transistors
中文描述: 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419-04, SC-70, 3 PIN
文件頁數: 1/4頁
文件大小: 61K
代理商: MSD42T1
Semiconductor Components Industries, LLC, 2004
January, 2004 Rev. 6
1
Publication Order Number:
MSD42WT1/D
MSD42WT1, MSD42T1
Preferred Device
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 and
SC59 packages which are designed for low power surface mount
applications.
Features
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
300
Vdc
Collector-Emitter Voltage
V
(BR)CEO
300
Vdc
Emitter-Base Voltage
V
(BR)EBO
6.0
Vdc
Collector Current Continuous
I
C
150
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
150
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55
+150
°
C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
300
Vdc
Collector-Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
300
Vdc
Emitter-Base Breakdown Voltage
(I
E
= 100 Adc, I
E
= 0)
V
(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
I
CBO
0.1
A
EmitterBase Cutoff Current
(V
EB
= 6.0 Vdc, I
B
= 0)
I
EBO
0.1
A
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc)
(V
CE
= 10 Vdc, I
C
= 30 mAdc)
h
FE1
h
FE2
25
40
Collector-Emitter Saturation Voltage
(Note 2) (I
C
= 20 mAdc,
I
B
= 2.0 mAdc)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width
300 s, D.C.
2%.
V
CE(sat)
0.5
Vdc
SC70 (SOT323)
CASE 419
(SCALE 2:1)
MARKING DIAGRAMS
3
1D M
1
2
Device
Package
Shipping
ORDERING INFORMATION
MSD42WT1
SC70/SOT323 3000/Tape & Reel
1D = Device Marking Code
M
= Date Code
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
3
1
2
SC59
CASE 318D
(SCALE 2:1)
J1D M
MSD42T1
SC59
3000/Tape & Reel
MSD42WT1G
3000/Tape & Reel
SC70/SOT323
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關代理商/技術參數
參數描述
MSD42T1G 功能描述:兩極晶體管 - BJT SS XSTR HV 300V TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSD42WT1 功能描述:兩極晶體管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSD42WT1G 功能描述:兩極晶體管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSD42WT1G_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon General Purpose High Voltage Transistors
MSD4410C 功能描述:LED 顯示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數位數量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長:628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube
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