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參數資料
型號: MSC3930-BT1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: NPN RF Amplifier Transistor
中文描述: 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419-04, SC-70, 3 PIN
文件頁數: 1/2頁
文件大小: 49K
代理商: MSC3930-BT1
Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 3
1
Publication Order Number:
MSC3930BT1/D
MSC3930BT1
Preferred Device
NPN RF Amplifier Transistor
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
(BR)CBO
30
Vdc
CollectorEmitter Voltage
V
(BR)CEO
20
Vdc
EmitterBase Voltage
V
(BR)EBO
5.0
Vdc
Collector Current — Continuous
I
C
30
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
°
C
Storage Temperature
T
stg
55 ~
+150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Characteristic
Symbol
Min
Max
Unit
CollectorBase Cutoff Current
(V
CB
= 10 Vdc, I
E
= 0)
I
CBO
0.1
μ
Adc
DC Current Gain
(1)
(V
CB
= 10 Vdc, I
C
= 1.0 mAdc)
h
FE
70
140
CollectorGain — Bandwidth
Product
(V
CB
= 10 Vdc, I
E
= 1.0 mAdc)
f
T
150
MHz
Reverse Transistor Capacitance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f =
10.7 MHz)
C
re
1.5
pF
1. Pulse Test: Pulse Width
300
μ
s, D.C.
2%.
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MSC3930BT1
SC70
3000/Tape & Reel
MARKING
DIAGRAM
COLLECTOR
3
2
BASE
1
EMITTER
SOT323/SC70
CASE 419
STYLE 3
1
2
3
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MSC3930BT1G
SC70
(PbFree)
3000/Tape & Reel
VB M
VB
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
1
相關PDF資料
PDF描述
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MSD42T1 NPN Silicon General Purpose High Voltage Transistors
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MSG36E41 SiGe HBT type
相關代理商/技術參數
參數描述
MSC3930-BT1G 功能描述:TRANS NPN RF BIPO 20V SOT-323 RoHS:是 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿(最大):4.7V 頻率 - 轉換:47GHz 噪聲系數(dB典型值@頻率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA,3V 電流 - 集電極 (Ic)(最大):45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD,扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
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MSC3A150H25 制造商:RFE 制造商全稱:RFE international 功能描述:PTC THERMISTOR Motor Applications
MSC3A220H30 制造商:RFE 制造商全稱:RFE international 功能描述:PTC THERMISTOR Motor Applications
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