- 您現在的位置：買賣IC網 > PDF目錄299522 > MT28C128564W18EFW-F706-P706KBTWT SPECIALTY MEMORY CIRCUIT, PBGA77 PDF資料下載
參數資料
| 型號： | MT28C128564W18EFW-F706-P706KBTWT |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| 封裝： | FBGA-77 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 158K |
| 代理商： | MT28C128564W18EFW-F706-P706KBTWT |
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
09005aef80b10a55
MT28C128564W18E_B.fm - Rev. B, Pub 11/03 EN
1
2003 Micron Technology, Inc. All rights reserved.
128Mb MULTIBANK BURST FLASH
32Mb/64Mb BURST CellularRAM COMBO
PRELIMINARY
FLASH AND CellularRAM
COMBO MEMORY
MT28C128532W18/W30E
MT28C128564W18/W30E
Low Voltage, Wireless Temperature
Features
Stacked die Combo package
Includes two 64Mb Flash devices
Choice of either one 32Mb or one 64Mb CellularRAM
device
Basic configuration
Flash
Flexible multibank architecture
4 Meg x 16 Async/Page/Burst interface
Support for true concurrent operations with no latency
CellularRAM
Low-power, high-density design
2 Meg x 16 or 4 Meg x 16 configurations
Burst
F_VCC, VCCQ, F_VPP, C_VCC voltages
1.70V (MIN)/1.95V (MAX) F_VCC, C_VCC
1.70V (MIN)/2.24V (MAX) VCCQ (W18)
2.20V (MIN)/3.30V (MAX) VCCQ (W30)
1.80V (TYP) F_VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) F_VPP tolerant (factory programming
compatibility)
Fast programming Algorithm (FPA)
Enhanced suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
Each Flash contains two 64-bit chip protection registers for
security purposes
100,000 ERASE cycles per block
Cross-compatible command set support
Extended command set
Common Flash interface (CFI) compliant
Manufacturer’s Identification Code (ManID)
Micron
Intel
Options
Flash Timing
60ns1 (W18)
70ns (W18/W30)
Flash Burst Frequency
66 MHz1 (W18)
54 MHz (W18/W30)
Flash Boot Block Configuration
Top/Top
Top/Bottom
Bottom/Top
Bottom/Bottom
CellularRAM Timing
70ns
85ns
CellularRAM Burst Frequency
66 MHz
I/O Voltage Range
VccQ 1.70V–2.24V (W18)
VccQ 2.20V–3.30V (W30)
Manufacturer’s Identification Code (ManID)
Micron (0x2Ch)
Intel (0x89h)
Operating Temperature Range
Wireless Temperature (-25°C to +85°C)
Package
77-ball FBGA (Standard) 8 x 10 grid
77-ball FBGA (Lead-free) 8 x 10 grid2
NOTE:
1. Contact factory for availability.
2. Contact factory for details.
A
B
C
D
E
F
G
H
J
K
1
2
3
4
5
6
7
8
Top View
(Ball Down)
C_VSS
F_VPP
F_WP#
F_RST#
DQ10
DQ3
DQ11
NC
F_VCC
A19
C_UB#
DQ2
DQ1
DQ9
NC
VCCQ
A4
A5
A3
A2
A1
A0
C_OE#
NC
F_CE1#
C_VSS
F_VCC
CLK
C_CE#
A20
A8
DQ13
DQ14
DQ6
F_VCC
VSSQ
A11
A12
A13
A15
A16
F_CE2#
F_OE2#
VCCQ
C_CRE
C_VSS
F_VCC
NC
C_WE#
ADV#
F_WE#
DQ5
DQ12
DQ4
C_VCC
C_VSS
A18
C_LB#
A17
A7
A6
DQ8
DQ0
F_OE1#
NC
VSSQ
RFU
A9
A10
A14
WAIT#
DQ7
DQ15
VCCQ
F_VSS
A21
Figure 1: 77-Ball FBGA
相關PDF資料 |
PDF描述 |
|---|---|
| MT28F321P18FG-90BET | 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA48 |
| MT28F640J3BS-12MET | 4M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 |
| MT29F4G08FABWGXXXXET | 512M X 8 FLASH 2.7V PROM, PDSO48 |
| MT2LSYT3272T1G-11P | 32K X 72 CACHE SRAM MODULE, 11 ns, DMA160 |
| MT2LSYT3272T1G-12P | 32K X 72 CACHE SRAM MODULE, 12 ns, DMA160 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MT28C3212P2FL | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3212P2NFL | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3214P2FL | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C3214P2FL-10 BET | 制造商:Micron Technology Inc 功能描述: |
| MT28C3214P2FL-10 BET TR | 制造商:Micron Technology Inc 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。