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參數(shù)資料
| 型號： | NAND512W4M5CZC5E |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 存儲器模塊 |
| 英文描述： | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| 中文描述： | 同一封裝內(nèi)整合了256/512Mb/1Gb（x8/x16，1.8/3V，528字節(jié)頁）NAND閃存以及256/512Mb（x16/x32，1.8V的）LPSDRAM的MCP |
| 文件頁數(shù)： | 21/23頁 |
| 文件大小： | 181K |
| 代理商： | NAND512W4M5CZC5E |
NAND256-M, NAND512-M, NAND01G-M
Part Numbering
21/23
4
Part Numbering
Ordering Information Scheme
Devices are shipped from the factory with the Flash memory content bits, in valid blocks,
erased to ’1’. For further information on any aspect of this device, please contact your
nearest ST Sales Office.
Table 10.
Example:
NAND256
R
3
M
4
A
ZB
5
E
Device Type
NAND Flash Memory
NAND Flash Density
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = V
DDF
= 1.7V to 1.95V
W = V
DDF
= 2.5V to 3.6V
NAND Bus Width
3 = x8
4 = x16
Family Identifier
M = 528 Byte Page NAND Flash + LPSDRAM
Device Options
0 = 256, x16, 104MHz, SDR, BGA107
2 = 2 x 256, 2x16, 104MHz, SDR, BGA137 or
512, x32, 133MHz, SDR, BGA137
3 = 256, x16, 133MHz, DDR BGA149
4 = 256, x16, 104MHz, SDR, BGA149
5 = 512, x16, 133MHz, DDR, BGA149
Product Version
A
B
C
Package
ZB = TFBGA
ZC = LFBGA
Temperature range
5 = -30°c to 85°C
Option
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing
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| NAND512R4M2CZB5E | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAND512W3M5BZB5F | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAS-xxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
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