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參數資料
型號: NAND512W4M5CZC5E
廠商: 意法半導體
元件分類: 存儲器模塊
英文描述: 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
中文描述: 同一封裝內整合了256/512Mb/1Gb(x8/x16,1.8/3V,528字節頁)NAND閃存以及256/512Mb(x16/x32,1.8V的)LPSDRAM的MCP
文件頁數: 7/23頁
文件大小: 181K
代理商: NAND512W4M5CZC5E
NAND256-M, NAND512-M, NAND01G-M
Summary description
7/23
LPSDRAM Component
The NAND256-M and NAND512-M devices contain either:
one M65KA256AL: 256Mbit (x16) Single Data Rate (SDR) LPSDRAM
two M65KA256AL: 256Mbit (x16) Single Data Rate (SDR) LPSDRAMs (SDR
0
and
SDR
1
)
one M65KG256AF: 256Mbit (x16) Double Data Rate (DDR) LPSDRAM
one M65KG512AB:
512Mbit (x16) Double Data Rate (DDR) LPSDRAM
one M65KC512AB: 512Mbit (x32) Single Data Rate (SDR) LPSDRAM
Refer to
Table 1: Product List
, for a description of the memories contained in the NAND256-
M, NAND256-M and NAND01G-M devices.
For detailed information on how to use the SDR LPSDRAM devices, refer to the
M65KA256AL and M65KC512AB datasheets which are available from your local
STMicroelectronics distributor.
For detailed information on how to use the DDR LPSDRAM device, refer to the
M65KG256AB datasheet which is available from your local STMicroelectronics distributor.
Figure 1.
Logic Diagram: NAND Flash & 1 x SDR LPSDRAM
Ai11024b
13
A0-A12
DQ0-DQ15
16
K
KE
W
D
V
DDQD
E
D
CAS
DQM0
DQM1
V
DDF
W
F
V
DDD
NAND256-M
NAND512-M
NAND01G-M
E
F
V
SSD
WP
AL
CL
RB
R
RAS
2
BA0-BA1
8/16
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
V
SSQD
V
SSF
相關PDF資料
PDF描述
NAND512R4M2CZB5E 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND512W3M5BZB5F 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAS-xxx SEMI-PRECISION POWER WIREWOUND RESISTOR
NASxxx SEMI-PRECISION POWER WIREWOUND RESISTOR
NAS1581 100 DEG FRUSH REDUCED HEAD BOLT
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