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參數資料
| 型號： | NCP1207DR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩壓器 |
| 英文描述： | PWM Current-Mode Controller for Free Running Quasi-Resonant Operation |
| 中文描述： | 0.5 A SWITCHING CONTROLLER, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁數： | 4/18頁 |
| 文件大小： | 202K |
| 代理商： | NCP1207DR2 |
NCP1207
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(For typical values T
J
= 25
°
C, for min/max values T
J
= 0
°
C to +125
°
C, Max T
J
= 150
°
C,
V
CC
= 11 V unless otherwise noted)
Rating
Pin
Symbol
Min
Typ
Max
Unit
DYNAMIC SELFSUPPLY
V
CC
Increasing Level at which the Current Source Turnsoff
V
CC
Decreasing Level at which the Current Source Turnson
V
CC
Decreasing Level at which the Latchoff Phase Ends
6
VCC
OFF
VCC
ON
VCC
latch
10.8
12
12.9
V
6
9.1
10
10.6
V
6
5.3
V
Internal IC Consumption, No Output Load on Pin 5,
F
SW
= 60 kHz
6
I
CC1
1.0
1.3
(Note 1)
mA
Internal IC Consumption, 1.0 nF Output Load on Pin 5,
F
SW
= 60 kHz
6
I
CC2
1.6
2.0
(Note 1)
mA
Internal IC Consumption in Latchoff Phase
6
I
CC3
330
A
INTERNAL STARTUP CURRENT SOURCE
(T
J
Highvoltage Current Source, V
CC
= 10 V
Highvoltage Current Source, V
CC
= 0
0
°
C)
8
I
C1
I
C2
4.3
7.0
9.6
mA
8
8.0
mA
DRIVE OUTPUT
Output Voltage Risetime @ CL = 1.0 nF, 1090% of Output
Signal
5
T
r
40
ns
Output Voltage Falltime @ CL = 1.0 nF, 1090% of Output
Signal
5
T
f
20
ns
Source Resistance
5
R
OH
R
OL
12
20
36
Sink Resistance
5
5.0
10
19
CURRENT COMPARATOR
(Pin 5 Unloaded)
Input Bias Current @ 1.0 V Input Level on Pin 3
3
I
IB
I
Limit
T
DEL
T
LEB
0.02
A
Maximum Internal Current Setpoint
3
0.92
1.0
1.12
V
Propagation Delay from Current Detection to Gate OFF State
3
100
160
ns
Leading Edge Blanking Duration
3
380
ns
Internal Current Offset Injected on the CS Pin during OFF Time
3
I
skip
200
A
OVERVOLTAGE SECTION
(V
CC
= 11 V)
Sampling Delay after ON Time
1
T
sample
V
ref
4.5
s
OVP Internal Reference Level
1
6.4
7.2
8.0
V
FEEDBACK SECTION
(V
CC
= 11 V, Pin 5 Loaded by 1.0 k )
Internal Pullup Resistor
2
Rup
20
k
Pin 3 to Current Setpoint Division Ratio
Iratio
3.3
Internal Softstart
Tss
1.0
ms
DEMAGNETIZATION DETECTION BLOCK
Input Threshold Voltage (V
pin1
Decreasing)
Hysteresis (V
pin1
Decreasing)
Input Clamp Voltage
High State (I
pin
1 = 3.0 mA)
Low State (I
pin
1 = 2.0 mA)
1
V
TH
V
H
35
50
90
mV
1
20
mV
1
1
VC
H
VC
L
8.0
0.9
10
0.7
12
0.5
V
V
Demag Propagation Delay
1
T
dem
C
par
T
blank
210
ns
Internal Input Capacitance at V
pin1
= 1.0 V
Minimum T
OFF
(Internal Blanking Delay after T
ON
)
1
10
pF
1
8.0
s
Timeout After Last Demag Transition
1
T
out
R
int
5.0
s
Pin 1 Internal Impedance
1. Max value at T
J
= 0
°
C.
1
28
k
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