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參數資料
| 型號： | NE33284 |
| 廠商： | NEC Corp. |
| 英文描述： | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | L至X波段超低噪聲放大器N溝道黃建忠場效應管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 62K |
| 代理商： | NE33284 |
1995
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for GPS,
TVRO and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., G
a
= 15.0 dB TYP. at f = 4 GHz
Gate Width: W
g
= 280
μ
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING
FORM
LEAD LENGTH
NE33284A-SL
STICK
L = 1.7 mm MIN.
NE33284A-T1
NE33284A-T1A
Tape & reel
L = 1.0
±
0.2 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
165
150
V
V
mA
mW
C
C
–65 to +150
RECOMMENDED OPERATING CONDITION (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
3
V
Drain Current
I
D
10
20
mA
Input Power
P
in
0
dBm
Document No. P10874EJ2V0DS00 (2nd edition)
(Previous No. TD-2369)
Date Published October 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
1
L
4
2
L
L
3
0.5 TYP.
0
U
1
0
1. Source
2. Drain
3. Source
4. Gate
相關PDF資料 |
PDF描述 |
|---|---|
| NE33284A | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE33284A-SL | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE34018 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE34018-T1 | SR BTS VERT LFT 4 ASY PLU |
| NE34018-T2 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NE33284A | 制造商:NEC 制造商全稱:NEC 功能描述:L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE33284A_98 | 制造商:NEC 制造商全稱:NEC 功能描述:SUPER LOW NOISE HJ FET |
| NE33284AS | 制造商:NEC 制造商全稱:NEC 功能描述:SUPER LOW NOISE HJ FET |
| NE33284A-SL | 制造商:NEC 制造商全稱:NEC 功能描述:L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE33284A-T1 | 功能描述:MOSFET DISC BY CEL 01/02 84AS LO-NOISE HJ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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