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參數資料
| 型號： | NE34018-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | 募到S波段低噪聲放大器N溝道黃建忠場效應管 |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 114K |
| 代理商： | NE34018-T2 |
DATA SHEET
HJ-FET
NE34018
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
1996
Document No. P11618EJ3V0DS00 (3rd edition)
Date Published September 1997 N
Printed in Japan
DESCRIPTION
NE34018 is a n-channel HJ-FET housed in MOLD package.
FEATURES
Low noise figure
NF = 0.6 dB TYP. at f = 2 GHz
High associated gain
Ga = 16 dB TYP. at f = 2 GHz
Gate width: Wg = 400
P
m
4 pins super mini mold
Tape & reel packaging only available
x
x
x
x
x
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
NE34018-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide. Pin 3
(Source), Pin 4 (Drain) face to
perforation side of the tape.
NE34018-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide. Pin 1
(Source), Pin 2 (Gate) face to
perforation side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part number for sample
order: NE34018)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
4.0
e
3.0
I
DSS
150
125
V
V
mA
mW
q
C
q
C
e
65 to +125
PACKAGE DIMENSIONS
in millimeters
V
2.1 ±0.2
1.25 ±0.1
(
(
2
0
0
0
0
0
1
2
4
3
0
+
–
0
+
–
0
+
–
0
+
–
0
+
–
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
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相關代理商/技術參數 |
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|---|---|
| NE34018-TI-63-A | 制造商:CEL 制造商全稱:CEL 功能描述:GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
| NE34018-TI-64-A | 制造商:CEL 制造商全稱:CEL 功能描述:GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
| NE350184C | 功能描述:射頻GaAs晶體管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE350184C(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| NE350184C-A | 功能描述:射頻GaAs晶體管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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