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參數資料
| 型號： | NE678M04-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 中功率NPN硅高頻晶體管 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 62K |
| 代理商： | NE678M04-T2 |
NE678M04
MEDIUM POWER NPN SILICON
HIGH FREQUENCY TRANSISTOR
R
2.05±0.1
1.25±0.1
3
1
1
4
2
0
1
2
+0.30
+0.01
-0.05
0
+
+
-
(leads 1, 3 and ,4)
0
+
+
-
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
Notes:
1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan.
4.
DESCRIPTION
The NE678M04 is fabricated using NEC's HFT3 wafer pro-
cess. With a transition frequency of 12 GHz, the NE678M04 is
usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
The NE678M04 is housed in NEC's new low profile/flat lead
style "M04" package
HIGH GAIN BANDWIDTH:
f
T
= 12 GHz
HIGH OUTPUT POWER:
P
-1dB
= 18 dBm at 1.8 GHz
HIGH LINEAR GAIN:
G
L
= 13 dB at 1.8 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
PART NUMBER
PACKAGE OUTLINE
EIAJ
3
REGISTRATION NUMBER
NE678M04
M04
2SC5753
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
P
1dB
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current
1
Gain at V
CE
= 3 V, I
C
= 30 mA
Output Power at 1 dB compression point at V
CE
= 2.8 V, I
CQ
= 10 mA,
f = 1.8 GHz, P
in
= 7 dBm
Linear Gain at V
CE
= 2.8 V, I
C
= 10 mA, f = 1.8 GHz, P
in
= -5 dBm
Maximum Available Gain
4
at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Collector Efficiency at V
CE
= 2.8 V, I
CQ
= 10 mA, f = 1.8 GHz,
P
in
= 7 dBm
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz, Z
S
= Z
opt
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
nA
nA
100
100
150
75
120
18.0
dBm
G
L
MAG
|S
21E
|
2
dB
dBm
dB
%
13.0
13.5
10.5
55
8.0
η
c
NF
f
T
Cre
dB
GHz
pF
1.7
12.0
0.42
2.5
0.7
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
D
R
California Eastern Laboratories
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K ±
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參數描述 |
|---|---|
| NE678M04-T2-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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| NE68000 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68018 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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