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參數資料
| 型號： | NGD15N41CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ignition IGBT 15 Amps, 410 Volts |
| 中文描述： | 15 A, 440 V, N-CHANNEL IGBT |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 94K |
| 代理商： | NGD15N41CLT4 |
Semiconductor Components Industries, LLC, 2004
March, 2004 Rev. 5
1
Publication Order Number:
NGD15N41CL/D
NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
NChannel DPAK, D
2
PAK and TO220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for CoilonPlug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and GateEmitter Resistor (R
GE
)
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
440
V
DC
CollectorGate Voltage
V
CER
440
V
DC
GateEmitter Voltage
V
GE
15
V
DC
Collector CurrentContinuous
@ T
C
= 25
°
C Pulsed
I
C
15
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500
, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0
, C = 200 pF
ESD
800
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
107
0.71
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
15 AMPS
410 VOLTS
V
CE(on)
2.1 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
RGE
RG
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
TO220AB
CASE 221A
STYLE 9
12
3
4
1
2
3
4
D
2
PAK
CASE 418B
STYLE 4
DPAK
CASE 369C
STYLE 2
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
1 2
3
4
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PDF描述 |
|---|---|
| NGP15N41CL | Ignition IGBT 15 Amps, 410 Volts(隔離柵雙極性晶體管，15A，410V) |
| NGD18N40CLB | Ignition IGBT 18 Amps, 400 Volts |
| NGD18N40CLBT4 | Ignition IGBT 18 Amps, 400 Volts |
| NID5001N | Self-protected FET with Temperature and Current Limit(自保護型FET（帶過溫和過流保護）) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NGD15N41CLT4G | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| NGD15N41CLT4G | 制造商:ON Semiconductor 功能描述:IGBT |
| NGD18N40ACLB | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT, 18 A, 400 V N.Channel DPAK |
| NGD18N40ACLBT4G | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| NGD18N40CLB | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 18 Amps, 400 Volts |
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