- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361118 > NID5001N (ON SEMICONDUCTOR) Self-protected FET with Temperature and Current Limit(自保護型FET（帶過溫和過流保護）) PDF資料下載
參數(shù)資料
| 型號： | NID5001N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Self-protected FET with Temperature and Current Limit(自保護型FET（帶過溫和過流保護）) |
| 中文描述： | 自我保護，過熱及電流限制場效應管（自保護型場效應管（帶過溫和過流保護）） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 66K |
| 代理商： | NID5001N |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 8
1
Publication Order Number:
NID5001N/D
NID5001N
SelfProtected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor’s latest MOSFET technology process to
achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Low R
DS(on)
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
42
Vdc
DraintoGate Voltage Internally Clamped
(R
GS
= 1.0 M )
V
DGR
42
Vdc
GatetoSource Voltage
V
GS
14
Vdc
Drain Current Continuous
I
D
Internally Limited
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
P
D
64
1.0
1.56
W
Thermal Resistance, JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
1.95
120
80
°
C/W
Single Pulse DraintoSource Avalanche
Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 4.5 Apk, L = 120 mH, R
G
= 25 )
E
AS
1215
mJ
Operating and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2
″
square FR4 board
(1
″
square, 2 oz. Cu 0.06
″
thick singlesided, t = steady state).
T
J
, T
stg
55 to 150
°
C
Device
Package
Shipping
ORDERING INFORMATION
NID5001NT4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 2
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
MARKING
DIAGRAM
Y
WW
D5001N = Device Code
G
= PbFree Package
= Year
= Work Week
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
YWW
D50
01NG
*Max current may be limited below this value
depending on input conditions.
1
2
3
= Gate
= Drain
= Source
1
2
3
V
DSS
(Clamped)
R
DS(ON)
TYP
23 m @ 10 V
I
D
MAX
(Limited)
42 V
33 A*
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NID5001NT4G
DPAK
(PbFree)
2500/Tape & Reel
相關PDF資料 |
PDF描述 |
|---|---|
| NID5003N | Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護FET) |
| NID5003NT4 | 42 V, 20 A, Single N−Channel, DPAK |
| NID6002N | Self(自保護型FET（帶過溫和過流保護）) |
| NIF5003N | Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護FET) |
| NIMD6302R2 | HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NID5001N/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self-Protected FET with Temperature and Current Limit |
| NID5001N_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self−Protected FET with Temperature and Current Limit |
| NID5001NT4 | 功能描述:MOSFET 42V 33A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NID5001NT4G | 功能描述:MOSFET 42V 33A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NID5003N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self−Protected FET with Temperature and Current Limit |
發(fā)布緊急采購，3分鐘左右您將得到回復。