- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361118 > NIF5003N (ON SEMICONDUCTOR) Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護FET) PDF資料下載
參數(shù)資料
| 型號： | NIF5003N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護FET) |
| 中文描述： | 自我保護，過熱及電流限制場效應(yīng)管（帶溫度和電流限制的自保護場效應(yīng)管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 53K |
| 代理商： | NIF5003N |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 0
1
Publication Order Number:
NIF5003N/D
NIF5003N
Preferred Device
SelfProtected FET
with Temperature and
Current Limit
42 V, 14 A, Single NChannel, SOT223
HDPlus
devices are an advanced series of power MOSFETs which
utilize ON Semiconductors latest MOSFET technology process to
achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
V
GS
I
D
P
D
42
Vdc
GatetoSource Voltage
14
Vdc
Drain Current
Continuous
Internally Limited
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
1.25
1.9
W
R
JC
R
JA
R
JA
12
100
65
°
C/W
Single Pulse DraintoSource Avalanche
Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 40 Vdc, I
L
= 3.2 Apk, L = 120 mH,
R
G
= 25
)
Operating and Storage Temperature Range
(Note 3)
E
AS
400
mJ
T
J
, T
stg
55 to
150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
1. Surface mounted onto minimum pad size (0.412
″
square) FR4 PCB, 1 oz cu.
2. Mounted onto 1
″
square pad size (1.127
″
square) FR4 PCB, 1 oz cu.
3. Normal prefault operating range. See thermal limit range conditions.
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
NIF5003NT1
SOT223
1000/Tape & Reel
NIF5003NT3
SOT223
4000/Tape & Reel
SOT223
CASE 318E
STYLE 3
DRAIN
GATE
DRAIN
SOURCE
(Top View)
MARKING
DIAGRAM
1
2
3
4
V
DSS
(Clamped)
R
DS(on)
TYP
I
D
MAX
(Limited)
42 V
53 m @ 10 V
14 A
A
5
5003N = Specific Device Code
A
= Assembly Location
WW
= Work Week
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NIMD6302R2 | HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET |
| NIS6111 | BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode(BERS IC，高效，高速二極管) |
| NJ8811 | CONTROL CIRCUIT FOR FREQUENCY SYNHESIS |
| NJ8812 | CONTROL CIRCUIT FOR FREQUENCY SYNHESIS |
| NJD2873T4 | NPN Silicon DPAK For Surface Mount Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NIF5003NT1 | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT1G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT3 | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF5003NT3G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NIF62514 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self-protected FET with Temperature and Current Limit |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。