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參數資料
| 型號： | NID5003N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護FET) |
| 中文描述： | 自我保護，過熱及電流限制場效應管（帶溫度和電流限制的自保護場效應管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 50K |
| 代理商： | NID5003N |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 2
1
Publication Order Number:
NID5003N/D
NID5003N
Preferred Device
SelfProtected FET
with Temperature and
Current Limit
42 V, 20 A, Single NChannel, DPAK
HDPlus devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
V
GS
I
D
P
D
42
Vdc
GatetoSource Voltage
14
Vdc
Drain Current
Continuous
Internally Limited
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
1.3
2.3
W
R
JC
R
JA
R
JA
3.0
95
54
°
C/W
Single Pulse DraintoSource Avalanche
Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 3.2 Apk, L = 120 mH, R
G
= 25 )
Operating and Storage Temperature Range
(Note 3)
E
AS
600
mJ
T
J
, T
stg
55 to
150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted onto minimum pad size (0.412
″
square) FR4 PCB, 1 oz cu.
2. Mounted onto 1
″
square pad size (1.127
″
square) FR4 PCB, 1 oz cu.
3. Normal prefault operating range. See thermal limit range conditions.
Device
Package
Shipping
ORDERING INFORMATION
NID5003NT4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 2
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
MARKING
DIAGRAM
D5003N = Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
Preferred
devices are recommended choices for future use
and best overall value.
*Max current may be limited below this value
depending on input conditions.
AYW
D5003N
1
2
3
= Gate
= Drain
= Source
1
2
3
V
DSS
(Clamped)
R
DS(on)
TYP
I
D
MAX
(Limited)
42 V
42 m @ 10 V
20 A*
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
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| NIF5003N | Self-Protected FET with Temperature and Current Limit(帶溫度和電流限制的自保護FET) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NID5003N_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self−Protected FET with Temperature and Current Limit |
| NID5003NT4 | 功能描述:MOSFET 42V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NID5003NT4G | 功能描述:MOSFET 42V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NID5004N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Self−Protected FET with Temperature and Current Limit |
| NID5004NT4G | 功能描述:功率驅動器IC POWER MICROINTEGRAT RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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