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參數資料
| 型號： | NST3946DXV6T1D |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual General Purpose Transistor |
| 中文描述： | 雙通用晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 160K |
| 代理商： | NST3946DXV6T1D |
Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1
Publication Order Number:
NST3946DXV6T1/D
NST3946DXV6T1,
NST3946DXV6T5
Dual General Purpose
Transistor
The NST3946DXV6T1 device is a spin-off of our popular
SOT-23/SOT-323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT-563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
h
FE
, 100-300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead-Free Solder Plating
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- Emitter Voltage
(NPN)
(PNP)
V
CEO
40
-40
Vdc
Collector- Base Voltage
(NPN)
(PNP)
V
CBO
60
-40
Vdc
Emitter- Base Voltage
(NPN)
(PNP)
V
EBO
6.0
-5.0
Vdc
Collector Current - Continuous
(NPN)
(PNP)
I
C
200
-200
mAdc
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
357
(Note 1)
2.9
(Note 1)
mW
mW/
°
C
Thermal Resistance
Junction-to-Ambient
R
JA
350
(Note 1)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
500
(Note 1)
4.0
(Note 1)
mW
mW/
°
C
1. FR-4 @ Minimum Pad
SOT-563
CASE 463A
PLASTIC
123
654
Q
1
(1)
(2)
(3)
(4)
(5)
(6)
Q
2
NST3946DXV6T1*
ORDERING INFORMATION
*Q1 PNP
Q2 NPN
http://onsemi.com
46 = Specific Device Code
D
= Date Code
MARKING DIAGRAM
46 D
Device
Package
Shipping
NST3946DXV6T1
SOT-563
4 mm pitch
4000/Tape & Reel
NST3946DXV6T5
SOT-563
2 mm pitch
8000/Tape & Reel
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| NST3946DXV6T1G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual Switching NPN & PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3946DXV6T5 | 功能描述:兩極晶體管 - BJT 200mA 60V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3946DXV6T5G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual Switching NPN & PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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