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參數資料
| 型號： | NTD110N02RT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 12.5 A, 24 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 64K |
| 代理商： | NTD110N02RT4 |
Semiconductor Components Industries, LLC, 2004
December, 2004 Rev. 6
1
Publication Order Number:
NTD110N02R/D
NTD110N02R
Power MOSFET
24 V, 110 A, NChannel DPAK
Features
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
HighEfficiency DCDC Converters
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Thermal Resistance JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Drain Current
Continuous @ T
C
= 25
°
C, Chip
Continuous @ T
C
= 25
°
C,
Limited by Package
Continuous @ T
A
= 25
°
C,
Limited by Wires
Single Pulse (t
p
= 10 s)
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
Operating and Storage
Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L
= 15.5 Apk, L = 1.0 mH, R
G
= 25 )
Maximum Lead Temperature for Soldering
Purposes, (1/8
″
from case for 10 s)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
V
DSS
V
GS
R
JC
P
D
24
±
20
1.35
110
V
V
I
D
I
D
I
D
I
D
110
110
32
110
°
C/W
W
A
A
A
A
R
JA
P
D
I
D
52
2.88
17.5
°
C/W
W
A
R
JA
P
D
I
D
T
J
, T
stg
100
1.5
12.5
55 to
175
120
°
C/W
W
A
°
C
E
AS
mJ
T
L
260
°
C
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENTS
Y
WW
T110N2
= Year
= Work Week
= Device Code
24 V
4.1 m @ 10 V
R
DS(on)
TYP
110 A
I
D
MAX
V
(BR)DSS
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
1
2
3
4
CASE 369D
DPAK
(Straight Lead)
STYLE 2
Y
T
1
1
Gate
3
Source
2
Drain
4
Drain
123
4
1
Gate
3
Source
2
Drain
4
Drain
Y
T
1
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTD110N02RT4G | 功能描述:MOSFET 24V 110A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12 | 制造商:OTAX Corporation 功能描述:Tape & Reel |
| NTD12N06L | 制造商:ON Semiconductor 功能描述: |
| NTD12N08/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:80 V Power MOSFET |
| NTD12N10 | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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