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參數(shù)資料
| 型號： | NTF3055L108 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| 中文描述： | 功率MOSFET 3.0甲，60伏特，邏輯電平N溝道的SOT - 223條第（3A，60V的邏輯電平，?通道，采用SOT - 223封裝的功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 76K |
| 代理商： | NTF3055L108 |
Publication Order Number:
NTF3055L108/D
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 4
1
NTF3055L108
Preferred Device
Power MOSFET
3.0 A, 60 V, Logic Level, NChannel
SOT223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 1.0 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
≤
10 ms)
V
GS
±
15
±
20
Vdc
Vpk
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
≤
10 s)
I
D
I
D
I
DM
3.0
1.4
9.0
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Derate above 25
°
C
P
D
2.1
1.3
0.014
Watts
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55
to 175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 7.0 Apk, L = 3.0 mH, V
DS
= 60 Vdc)
E
AS
74
mJ
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JA
R
JA
72.3
114
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size, 1 oz.
(Cu. Area 0.0995 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 22.4 oz. (Cu. Area 0.272 in
2
).
D
G
S
1
2
3
4
3.0 A, 60 V
R
DS(on)
= 120 m
NChannel
SOT223
CASE 318E
STYLE 3
MARKING DIAGRAM
AYW
3055L
3055L
A
Y
W
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
3
Source
2
1
4
Gate
Drain
Drain
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTF3055L108/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 3.0 Amps， 60 Volts， Logic Level |
| NTF3055L108D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
| NTF3055L108T1 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L108T1G | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L108T3 | 功能描述:MOSFET 60V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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