- 您現在的位置：買賣IC網 > PDF目錄361164 > NTHD4508N (ON SEMICONDUCTOR) Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET PDF資料下載
參數資料
| 型號： | NTHD4508N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 55K |
| 代理商： | NTHD4508N |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 3
1
Publication Order Number:
NTHD4508N/D
NTHD4508N
Power MOSFET
20 V, 4.1 A, Dual NChannel ChipFET
Features
Low R
DS(on)
and Fast Switching Speed
Leadless ChipFET Package has 40% Smaller Footprint than TSOP6
Excellent Thermal Capabilities Where Heat Transfer is Required
PbFree Package is Available
Applications
DCDC Buck/Boost Converters
Battery and Low Side Switching in Portable Equipment Such as MP3
Players, Cell Phones, DSCs and PDAs
Level Shifting
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
20
V
GatetoSource Voltage
±
12
V
Continuous Drain
Current
Steady
State
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
3.0
A
2.2
t
5 s
4.1
Power Dissipation
Steady
State
P
D
1.13
W
0.59
t
5 s
2.1
Pulsed Drain Current
t
p
= 10
μ
s
I
DM
T
J
,
T
STG
12
A
Operating Junction and Storage Temperature
55 to
150
°
C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State
(Note 1)
R
θ
JA
110
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTHD4508NT1
ChipFET
ChipFET
(PbFree)
3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 2
http://onsemi.com
20 V
80 m @ 2.5 V
60 m @ 4.5 V
R
DS(on)
TYP
4.1 A
I
D
MAX
V
(BR)DSS
NChannel MOSFET
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
NTHD4508NT1G
3000/Tape & Reel
8
7
6
5
5
6
7
8
1
2
3
4
D
1
, D
2
G
1
, G
2
S
1
, S
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
C
M
C8 = Specific Device Code
M = Month Code
相關PDF資料 |
PDF描述 |
|---|---|
| NTHD4508NT1 | Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
| NTHD4508NT1G | Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
| NTHD4N02F | Power MOSFET and Schottky Diode |
| NTHD4N02FT1 | Power MOSFET and Schottky Diode |
| NTHD4N02FT1G | Power MOSFET and Schottky Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NTHD4508NT1 | 功能描述:MOSFET 20V 4.1A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4508NT1G | 功能描述:MOSFET 20V 4.1A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4N02 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTHD4N02F | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4N02FT1 | 功能描述:MOSFET 20V 3.9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。