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參數(shù)資料
| 型號： | NTHD4N02FT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET and Schottky Diode |
| 中文描述： | 2900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, CASE 1206A-03, CHIPFET-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 64K |
| 代理商： | NTHD4N02FT1G |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 7
1
Publication Order Number:
NTHD4N02F/D
NTHD4N02F
Power MOSFET and
Schottky Diode
20 V, 3.9 A, NChannel, with 3.7 A
Schottky Barrier Diode, ChipFET
Features
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP6 Package with Better Thermals
Super Low Gate Charge MOSFET
Ultra Low V
F
Schottky
PbFree Package is Available
Applications
Fast Switching, low Gate Charge for Dc to Dc Buck and Boost
Converters
LiIon Battery Applications in Cell Phones, PDAs, DSCs, and Media
Players
Load Side Switching
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
±
12
V
Continuous Drain
Current
Steady
State
T
J
= 25
°
C
I
D
2.9
A
T
J
= 85
°
C
2.1
t
5 s
T
J
= 25
°
C
3.9
Pulsed Drain Current
t
p
=10 s
I
DM
12
A
Power Dissipation
Steady
State
T
J
= 25
°
C
P
D
0.91
W
T
J
= 85
°
C
0.36
t
5 s
T
J
= 25
°
C
2.1
Continuous Source Current (Body Diode)
I
S
2.6
A
Operating Junction and Storage
Temperature
T
J
, T
STG
55 to 150
°
C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
SCHOTTKY DIODE MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V
RRM
20
V
DC Blocking Voltage
V
R
20
V
Average Rectified
Forward Current
Steady
State
J
T
= 25 C
I
F
2.2
A
t
5 s
3.7
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device
Package
Shipping
ORDERING INFORMATION
NTHD4N02FT1
ChipFET
ChipFET
(PbFree)
3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 3
http://onsemi.com
C
A
SCHOTTKY DIODE
20 V
20 V
80 m @ 2.5 V
60 m @ 4.5 V
0.35 V
R
DS(on)
TYP
3.9 A
3.7 A
I
D
MAX
V
(BR)DSS
MOSFET
SCHOTTKY DIODE
V
R
MAX
I
F
MAX
V
F
TYP
G
D
S
NChannel MOSFET
1
1
1
8
7
6
5
4
3
2
1
MARKING
DIAGRAM
C
M
C2 = Specific Device Code
M = Month Code
1
2
3
4
C
C
D
D
A
A
S
G
PIN
CONNECTIONS
NTHD4N02FT1G
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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| NTHD4P02 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTHD4P02F | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
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| NTHD4P02FT1 | 功能描述:MOSFET -20V -3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4P02FT1G | 功能描述:MOSFET -20V -3A P-Channel w/3A Schottky RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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