- 您現在的位置：買賣IC網 > PDF目錄361164 > NTHS5404T1 (ON SEMICONDUCTOR) Power MOSFET PDF資料下載
參數資料
| 型號： | NTHS5404T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET |
| 中文描述： | 5200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 1206A-03, CHIPFET-8 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | NTHS5404T1 |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 3
1
Publication Order Number:
NTHS5404T1/D
NTHS5404
Power MOSFET
20 V, 7.2 A, NChannel ChipFET
Features
Low R
DS(on)
for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package Saves Board Space
PbFree Package is Available
Applications
Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
5 Secs
Steady
State
Unit
DrainSource Voltage
V
DS
20
V
GateSource Voltage
V
GS
12
V
Continuous Drain Current
(T
J
= 150
°
C) (Note 1)
T
A
= 25
°
C
T
A
= 85
°
C
I
D
7.2
5.2
5.2
3.8
A
Pulsed Drain Current
I
DM
20
A
Continuous Source Current
(Diode Conduction) (Note 1)
I
S
7.2
5.2
A
Maximum Power Dissipation
(Note 1)
T
A
= 25
°
C
T
A
= 85
°
C
P
D
2.5
1.3
1.3
0.7
W
Operating Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTHS5404T1
ChipFET
3000/Tape & Reel
G
D
S
D
D
D
D
D
1
2
3
4
5
6
7
8
PIN
CONNECTIONS
G
D
S
NChannel MOSFET
ChipFET
CASE 1206A
STYLE 1
MARKING
DIAGRAM
A
M
A2 = Specific Device Code
M = Month Code
1
2
3
4
8
7
6
5
http://onsemi.com
20 V
25 m @ 4.5 V
R
DS(on)
TYP
7.2 A
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTHS5404T1G
ChipFET
(PbFree)
3000/Tape & Reel
相關PDF資料 |
PDF描述 |
|---|---|
| NTHS5404T1G | Power MOSFET |
| NTHS5445T1 | Power MOSFET P-Channel 5.2 A, 8 V(5.2A，8V，P通道的功率MOSFET) |
| NTJD4001NT1 | Small Signal MOSFET |
| NTJD4001NT1G | Small Signal MOSFET |
| NTJD4001N | Small Signal MOSFET 30 V, 250 mA(30V, 250mA, 小信號MOSFET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NTHS5404T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET N-Channel ChipFET? |
| NTHS5404T1G | 功能描述:MOSFET 20V 7.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHS5404T1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTHS5441 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:−20 V, −5.3 A, P−Channel ChipFET |
| NTHS5441PT1G | 功能描述:MOSFET CHIPFETS 20V .055 TR PFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。