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參數(shù)資料
| 型號： | NTJD4001NT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small Signal MOSFET |
| 中文描述： | 250 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | NTJD4001NT1G |
Semiconductor Components Industries, LLC, 2003
August, 2003 Rev. 0
1
Publication Order Number:
NTJD4001N/D
NTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual NChannel, SC88
Features
Low Gate Charge for Fast Switching
Small Footprint 30% Smaller than TSOP6
ESD Protected Gate
PbFree Package for Green Manufacturing (G Suffix)
Applications
Low Side Load Switch
LiIon Battery Supplied Devices Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
DraintoSource Voltage
V
DSS
30
V
GatetoSource Voltage
V
GS
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
250
mA
T
A
= 85
°
C
180
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
272
mW
Pulsed Drain Current
t =10
μ
s
I
DM
600
mA
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
Source Current (Body Diode)
I
S
250
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
1.
Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTJD4001NT1
SC88
3000 Units/Reel
Top View
SC88 / SOT363
CASE 419B
STYLE 26
MARKING DIAGRAM
6
1
http://onsemi.com
TE
D
= Device Code
= Date Code
1
6
Drain1
Gate2
Source2
Source1
Gate1
Drain2
Top View
SOT363
SC88 (6 LEADS)
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
V
(BR)DSS
R
DS(on)
TYP
I
D
Max
30 V
1.0 @ 4.0 V
1.5 @ 2.5 V
250 mA
NTJD4001NT1G
SC88
(PbFree)
3000 Units/Reel
PIN ASSIGNMENT
TED
D
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTJD4001NT1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTJD4001NT2G | 功能描述:MOSFET NFET 250mA 30V TR SC88 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD4105C | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88 |
| NTJD4105CT1 | 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD4105CT1G | 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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