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參數資料
| 型號： | NTK3134N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 58K |
| 代理商： | NTK3134N |
Semiconductor Components Industries, LLC, 2006
December, 2006 Rev. 0
1
Publication Order Number:
NTK3134N/D
NTK3134N
Power MOSFET
20 V, 890 mA, Single NChannel with
ESD Protection, SOT723
Features
N channel Switch with Low R
DS(on)
44% Smaller Footprint and 38% Thinner than SC89
Low Threshold Levels Allowing 1.5 V R
DS(on)
Rating
Operated at Low Logic Level Gate Drive
These are PbFree Devices
Applications
Load/Power Switching
Interface Switching
Logic Level Shift
Battery Management for Ultra Small Portable Electronics
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage
V
GS
±
6
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
890
mA
T
A
= 85
°
C
640
t
≤
5 s
T
A
= 25
°
C
990
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
450
mW
t
≤
5 s
550
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
I
D
750
mA
T
A
= 85
°
C
540
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
310
mW
Pulsed Drain
Current
t
p
= 10 s
I
DM
1.8
A
Operating Junction and Storage
Temperature
T
J
, T
STG
55 to
150
°
C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface mounted on FR4 board using the minimum recommended pad size
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP
0.20 @ 4.5 V
I
D
Max
890 mA
20 V
0.26 @ 2.5 V
Device
Package
Shipping
ORDERING INFORMATION
NTK3134NT1G
SOT723*
4000 / Tape & Reel
SOT723
CASE 631AA
STYLE 5
MARKING DIAGRAM
Top View
3
1
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
0.42 @ 1.8 V
KF M
1
KF
M
= Specific Device Code
= Date Code
1 Gate
2 Source
3 Drain
0.62 @ 1.5 V
NTK3134NT5G
SOT723*
8000 / Tape & Reel
*These packages are inherently PbFree.
790 mA
700 mA
200 mA
SOT723 (3LEAD)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTK3134NT1G | 功能描述:MOSFET 20V/6V N CH T1 890mA 0.3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTK3134NT1H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTK3134NT5G | 功能描述:MOSFET 20V/6V N CH T1 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTK3134NT5H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTK3139P | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 |
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