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參數資料
| 型號： | NTJD4001N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small Signal MOSFET 30 V, 250 mA(30V, 250mA, 小信號MOSFET) |
| 中文描述： | 250 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 419B-02, SC-88, SC-70-6, 6 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NTJD4001N |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 2
1
Publication Order Number:
NTJD4001N/D
NTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual NChannel, SC88
Features
Low Gate Charge for Fast Switching
Small Footprint 30% Smaller than TSOP6
ESD Protected Gate
PbFree Package is Available
Applications
Low Side Load Switch
LiIon Battery Supplied Devices Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
DraintoSource Voltage
V
DSS
30
V
GatetoSource Voltage
V
GS
±
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
250
mA
T
A
= 85
°
C
180
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
272
mW
Pulsed Drain Current
t =10 s
I
DM
600
mA
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
Source Current (Body Diode)
I
S
250
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
SOT363
CASE 419B
STYLE 26
MARKING DIAGRAM &
PIN ASSIGNMENT
http://onsemi.com
TE
M
1
6
1
TE
M
= Device Code
= Date Code
= PbFree Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
V
(BR)DSS
R
DS(on)
TYP
I
D
Max
30 V
1.0 @ 4.0 V
1.5 @ 2.5 V
250 mA
Device
Package
Shipping
ORDERING INFORMATION
NTJD4001N
SOT363
SOT363
(PbFree)
3000/Tape & Reel
NTJD4001NG
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Top View
SOT363
SC88 (6 LEADS)
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTJD4001NT1 | 功能描述:MOSFET 30V 250mA Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD4001NT1G | 功能描述:MOSFET 30V 250mA Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD4001NT1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTJD4001NT2G | 功能描述:MOSFET NFET 250mA 30V TR SC88 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJD4105C | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88 |
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