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參數(shù)資料
| 型號： | NTJS4405N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 25 V, 1.2 A(25V, 1.2A, 小信號MOSFET) |
| 中文描述： | 小信號MOSFET 25五，1.2（25V的，1.2A電流，小信號MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 131K |
| 代理商： | NTJS4405N |
Semiconductor Components Industries, LLC, 2006
February, 2006
Rev. 4
1
Publication Order Number:
NTJS4405N/D
NTJS4405N
Small Signal MOSFET
25 V, 1.2 A, Single, N
Channel, SC
88
Features
Advance Planar Technology for Fast Switching, Low R
DS(on)
Higher Efficiency Extending Battery Life
Pb
Free Packages are Available
Applications
Boost and Buck Converter
Load Switch
Battery Protection
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
25
V
Gate
to
Source Voltage
V
GS
8.0
V
Drain Current
t < 5 s
T
A
= 25
°
C
T
A
= 25
°
C
T
A
= 75
°
C
I
D
1.2
A
Continuous Drain Current
(Note 1)
Steady
State
I
D
1.0
A
0.80
Power Dissipation (Note 1)
Steady State
P
D
0.63
W
Power Dissipation (Note 1)
t
5 s
P
D
0.89
W
Pulsed Drain Current
t
p
= 10 s
I
DM
3.7
A
°
C
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
+150
Source Current (Body Diode) (Note 1)
I
S
0.8
A
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
ESD Rating
Machine Model
250
V
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
Junction
to
Lead – Steady State (Note 1)
R
JL
102
°
C/W
Junction
to
Ambient – Steady State (Note 1)
R
JA
200
Junction
to
Ambient
t
5 s (Note 1)
R
JA
140
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTJS4405NT1
SC
88
3000 / Tape & Reel
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ
I
D
Max
25 V
249 m @ 4.5 V
299 m @ 2.7 V
1.2 A
1 2 5 6
Drain
3
Gate
4
Source
N
Channel
NTJS4405NT1G
SC
88
(Pb
Free)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTJS4405NT4
SC
88
NTJS4405NT4G
SC
88
(Pb
Free)
10,000 / Tape & Reel
MARKING DIAGRAM &
PIN ASSIGNMENT
D
TS
M
1
6
1
TS
M
= Device Code
= Date Code
= Pb
Free Package
D
S
D
D
G
(Note: Microdot may be in either location)
10,000 / Tape & Reel
SC
88/SOT
363
CASE 419B
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| NTJS4405NT1 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJS4405NT1G | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJS4405NT4 | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTJS4405NT4G | 功能描述:MOSFET 25V 1.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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