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參數(shù)資料
| 型號(hào)： | NTHD4508NT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
| 中文描述： | 3.1 A, 20 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 1206A-03, CHIPFET-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 55K |
| 代理商： | NTHD4508NT1G |
Semiconductor Components Industries, LLC, 2004
October, 2004 Rev. 3
1
Publication Order Number:
NTHD4508N/D
NTHD4508N
Power MOSFET
20 V, 4.1 A, Dual NChannel ChipFET
Features
Low R
DS(on)
and Fast Switching Speed
Leadless ChipFET Package has 40% Smaller Footprint than TSOP6
Excellent Thermal Capabilities Where Heat Transfer is Required
PbFree Package is Available
Applications
DCDC Buck/Boost Converters
Battery and Low Side Switching in Portable Equipment Such as MP3
Players, Cell Phones, DSCs and PDAs
Level Shifting
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
20
V
GatetoSource Voltage
±
12
V
Continuous Drain
Current
Steady
State
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 85
°
C
T
J
= 25
°
C
3.0
A
2.2
t
5 s
4.1
Power Dissipation
Steady
State
P
D
1.13
W
0.59
t
5 s
2.1
Pulsed Drain Current
t
p
= 10
μ
s
I
DM
T
J
,
T
STG
12
A
Operating Junction and Storage Temperature
55 to
150
°
C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State
(Note 1)
R
θ
JA
110
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
Device
Package
Shipping
ORDERING INFORMATION
NTHD4508NT1
ChipFET
ChipFET
(PbFree)
3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 2
http://onsemi.com
20 V
80 m @ 2.5 V
60 m @ 4.5 V
R
DS(on)
TYP
4.1 A
I
D
MAX
V
(BR)DSS
NChannel MOSFET
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
NTHD4508NT1G
3000/Tape & Reel
8
7
6
5
5
6
7
8
1
2
3
4
D
1
, D
2
G
1
, G
2
S
1
, S
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
C
M
C8 = Specific Device Code
M = Month Code
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