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參數(shù)資料
| 型號： | PBSS2515VPN |
| 英文描述： | 15 V low VCEsat NPN/PNP transistor |
| 中文描述： | 15伏低飽和壓降NPN/PNP型晶體管 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 64K |
| 代理商： | PBSS2515VPN |
Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit
http://www.semiconductors.philips.com
.
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com
.
Fax:
+31 40 27 24825
Printed in The Netherlands
613514/03/pp
8
Date of release:
2001 Sep 21
Document order number:
9397 750 08429
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PBSS2515VPN T/R | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515VPN,115 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS2515VPN115 | 制造商:NXP Semiconductors 功能描述:BISS TRANSISTOR ARRAY NPN & PNP 15V 5 |
| PBSS2515VS | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-666 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-666 制造商:NXP Semiconductors 功能描述:Dual NPN/NPN transistor,PBSS2515VS |
| PBSS2515VS T/R | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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