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參數(shù)資料
| 型號(hào)： | PBSS8110S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 V, 1 A NPN low VCEsat (BISS) transistor |
| 中文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 54K |
| 代理商： | PBSS8110S |
2004 Aug 13
4
Philips Semiconductors
Product specification
100 V, 1 A
NPN low V
CEsat
(BISS) transistor
PBSS8110S
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
150
150
100
80
100
TYP.
165
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 80 V; I
E
= 0
V
CB
= 80 V; I
E
= 0; T
j
= 150
°
C
V
CE
= 80 V; V
BE
= 0
V
EB
= 4 V; I
C
= 0
V
CE
= 10 V; I
C
= 1 mA
V
CE
= 10 V; I
C
= 250 mA
V
CE
= 10 V; I
C
= 0.5 A; note 1
V
CE
= 10 V; I
C
= 1 A; note 1
I
C
= 100 mA; I
B
= 10 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 1 A; I
B
= 100 mA; note 1
I
C
= 1 A; I
B
= 100 mA; note 1
V
CE
= 10 V; I
C
= 1 A
V
CE
= 10 V; I
C
= 50 mA; f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
100
50
100
100
500
40
120
200
200
1.05
0.9
7.5
nA
μ
A
nA
nA
I
CES
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
V
CEsat
collector-emitter saturation
voltage
mV
mV
mV
m
V
V
MHz
pF
R
CEsat
V
BEsat
V
BEon
f
T
C
c
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
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| PBSS8110T/DG,215 | 制造商:NXP Semiconductors 功能描述:Tape & Reel |
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