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參數資料
型號: PBSS8110S
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 100 V, 1 A NPN low VCEsat (BISS) transistor
中文描述: 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數: 7/7頁
文件大小: 54K
代理商: PBSS8110S
Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit
http://www.semiconductors.philips.com
.
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com
.
Fax:
+31 40 27 24825
Printed in The Netherlands
R75/02/pp
7
Date of release:
2004 Aug 13
Document order number:
9397 750 13642
相關PDF資料
PDF描述
PBW1CL Assemblies
PBW1CV Assemblies
PBW3CL Assemblies
PBW3CV Assemblies
PBW3CW Assemblies
相關代理商/技術參數
參數描述
PBSS8110S,126 功能描述:兩極晶體管 - BJT TRANS BISS AMMO LARGE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS8110T 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-23 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-23 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:300mW; DC Collector Current:1A; DC Current Gain hFE:150; Operating Temperature Min:-65C; Operating Temperature ;RoHS Compliant: Yes
PBSS8110T T/R 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 100V 1A 3-Pin TO-236AB T/R
PBSS8110T,215 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS8110T/DG,215 制造商:NXP Semiconductors 功能描述:Tape & Reel
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