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參數(shù)資料
| 型號： | PDTC123 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN resistor-equipped transistor |
| 中文描述： | NPN配電阻型晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | PDTC123 |
1999 May 27
3
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistor
PDTC123JEF
THERMAL CHARACTERISTICS
Note
1.
Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
100
1.1
1.54
TYP.
0.6
0.75
2.2
MAX.
UNIT
I
CBO
I
CEO
collector cut-off current
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
C
= 5 mA; I
B
= 0.25 mA
I
C
= 100
μ
A; V
CE
= 5 V
I
C
= 5 mA; V
CE
= 0.3 V
100
1
50
180
100
0.5
2.86
nA
μ
A
μ
A
μ
A
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
mV
V
V
k
resistor ratio
17
21
26
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
2.5
pF
R1
R2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PDTC123J | NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM |
| PDTC123JK | NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM |
| PDTC123JS | NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM |
| PDTC124EK | NPN resistor-equipped transistor |
| PDTC124ES | NPN resistor-equipped transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDTC123E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm |
| PDTC123EE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ |
| PDTC123EE,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTC123EE115 | 制造商:NXP Semiconductors 功能描述:TRANS NPN W/RES SOT-416 |
| PDTC123EEF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ |
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