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參數(shù)資料
型號: PHB160N03T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 13/13頁
文件大小: 271K
代理商: PHB160N03T
Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 13 September 2000
Document order number: 9397 750 07325
Contents
Philips Semiconductors
PHB160N03T
N-channel enhancement mode field-effect transistor
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information
. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data
. . . . . . . . . . . . . . . . . . . . . 2
Limiting values
. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics
. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance. . . . . . . . . . . . . . 4
Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline
. . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status
. . . . . . . . . . . . . . . . . . . . . . . 11
Definitions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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PHB160NQ08T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET
PHB160NQ08T /T3 功能描述:MOSFET TRENCH-75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB160NQ08T,118 功能描述:MOSFET TRENCH-75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB1635-5R0176-1 制造商:Cooper Bussmann 功能描述:CAP,17F,5V, ACTIVE BALANCE, VERT - Tape and Reel 制造商:COOPER BUSSMANN 功能描述:CAP,17F,5V, ACTIVE BALANCE, VERT
PHB174NQ04LT /T3 功能描述:MOSFET N-CH TRENCH 40V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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